BF N-channel Dual Gate MOS-fieldeffect ion Mode. Details, datasheet, quote on part number: BF Telefunken Electronic BF Dual Gate N-channel MOS field effect transistor Data Sheet 10 pages DS 19XX pdf/zip. BF Datasheet PDF Download – N-CHANNEL DUAL GATE MOS- FIELDEFFECT ION MODE, BF data sheet.

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Hard to find parts for your electronic project. H12A05 transistor transistor BF Text: An advanced level-shift circuit allows high-side gate. Media New media New comments Search media.

This file provides some background to how the model files areParameters The bipolar transistor circuit model used by the SPICE software is a modified version of the. If an output is driven directly. This bd960 for 2 pcs of the 3SK80 Transistor. The inductors may be mounted in screened assemblies. The model is believed accurate. I have personally been burned by fake RF devices from China.

BF Datasheet PDF –

You won’t find cheaper prices anywhere! Consolidated Electronics was created in February of It is unnecessary to include an ESD or Package model for the VBB pins of the models because VBB issingle ended output; the load resistor, package modelESD structure and output emitter follower, of the unused output, may be eliminated to simplify the system model.


I’ve included a photo of the datasheet. Delivery Options see all. Electro Tech is an online community with overmembers who enjoy talking about and building electronic circuits, projects and gadgets. The capacitors used for high impedance coupling applications will typically be significantly less than the values of the tuning capacitors C1 and C2.

All brand new and in excellent condition. Could you double check the part number? I don’t care if the package is the same, as long as I can make it work. Date code is year week 6.

Additional information is found in HFAN 6. Depending on the frequency of operation, the gain will be from 15dB to 30dB – higher gain at lower frequencies.

Decoupling values are typical for operation on the HF bands. It isincluding this notice for that purpose only. Integrated gate protection diodes.

All other rights are reserved. Channels N-Channel Dual Gate.

Mpf 122 Mosfet

Best deal on eBay! Datashewt 3 day delivery. Articles Top Articles Search resources. High cross modulation performance. C1 should be ganged to the tuning capacitor in the crystal set. Additional RF selectivity may be implemented by using a multi- section bandpass filter instead datsaheet the single tuned circuit that is shown. We will reply you ASAP. Bf90 for RF amplifier, Oscillator and Mixer circuits. Guaranteed by Sat, Jan 5.

Now, a quick sermon about counterfeit parts. This site uses cookies to help personalise content, tailor your experience and to keep you logged in if you register. High quality products at amazing prices. The no- signal AGC bias should be around 4- 5V – check the data sheet.


You must log in or register to reply here. Simplified input package model and inputMaxim MAX 2.

BF960 N-ch Dual Gate UHF MosFET

I am a senior electronic tech who is downsizing. Great replacement for 3N and This device can replace many 40xxxx, 3nxxx and MFExxx series dual-gate mosfets.

The model is believed accurate but no condition or warranty as to its merchantability or fitness. If anyone has info on this mosfet, or knows of a sub that’ll work, or if I can even put two together or not ,please respond. To participate you need to register. I don’t have any prior experience with mosfets, so I don’t totally understand the specs.

Guaranteed Delivery see all. Potentiometer Questions Started by norbss Yesterday at Gold lead datasheeet very difficult to find. Care is needed with the layout to ensure stability. Replacement Transformer Started by ncag Today at 7: Pls note that item will be shipped from Singapore.

L4 which would typically be between 7:

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